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0000RENG43684
Rehmie.com.ng
BS170 Transistor
1pc of BS170 Transistor Transistor Type: N Channel -Voltage Applied From Drain to Source: 60V(Maximum) -Gate to Source Voltage Should Be: & plusmn;20V(Maximum) -Continues Drain Current is: 500mA(Maximum) -Pulsed Drain Current is: 500mA(Maximum) -Power Dissipation is: 830mW(Maximum) -Voltage Required to Conduct: 0.8V(Minimum) -Storage & Operating temperature Should Be: -55 to +150 Celsius -Low Offset and Error Voltage -High-Density Cell Design to Minimize ON-state Resistance-RDS(ON) -Voltage Controlled Small Signal Switch -Fast Switching (TON = 4ns)
BS170 Transistor
BS170 Transistor
₦ 796.25 ₦ 875.00 -9%
0000RENG43692
Rehmie.com.ng
BS250 Transistor
Transistor Polarity: PMaximum Drain Source Voltage: -45 VMaximum Continuous Drain Current : -0.25 AMaximum Gate Source Voltage : & plusmn;20VPower Dissipation : 830 mWNumber of Elements per Chip :1Maximum Forward Voltage: -45VDCOutput Power : 0.83WChannel Mode: P-Channel EnhancementChannel Type: PConfiguration: SingleMinimum Operating Temperature :-65 & deg;CMaximum Operating Temperature :150 & deg;C Pins: 3Width : 4.2mmHeight : 5.2mmProduct Length: 4.8mmProduct Type: MOSFET
BS250 Transistor
BS250 Transistor
₦ 1,822.50 ₦ 2,250.00 -19%
0000RENG99601
Rehmie.com.ng
200pcs Assorted Transistor
BC547, BC557 A377, C945, S9014 S8550 13001 S8050 are general purpose transistor, the low voltage, and low power capability of this device make this transistor more reliable to use in wider common applications. Transistors are one of the very important components used in electronic circuit constructions. Transistors can be found almost everywhere; from simple relay driver circuits to complicated motherboard circuits. In reality, your microcontrollers and microprocessors are nothing more than a collection of many transistors synthesized to do a collective operation. Specifications: Package Type: TO-92 (Through-Hole) Type: NPN, PNP Transistors: BC547, BC557, A377, C945, S9014, S8550, 13001 and S805 = 25 each value totaling 200pcs Collector Current (Ic): 100mA Peak Collector Current (Icm):150mA Total Power Dissipation(Ptot): 400mW Collector Emitter Voltage(Vceo): 45V Saturation Voltage (Vce(sat)):140mV Transition Frequency(Ft): 270MHz Applications Switching Driver stage amplifier action AF amplifier Can be used Darlington pair Used in making led flasher
200pcs Assorted Transistor
200pcs Assorted Transistor
₦ 9,400.00 ₦ 10,000.00 -6%
000RENG108328
Rehmie.com.ng
Transistor Switch Kit - 170pcs
A Transistor switch which is used for opening or closing of a circuit, that means the transistor is commonly used as a switch in the electronic devices only for the low voltage applications because of its low power consumption. Transistor work as a switch when it is in cutoff and saturation region
Transistor Switch Kit - 170pcs
Transistor Switch Kit - 170pcs
₦ 3,450.00 ₦ 3,750.00 -8%
0000RENG73596
Rehmie.com.ng
Bc547+bc557 General purpose Transistor - 100Pieces
The BC547 and BC557 are general purpose transistor, the low voltage, and low power capability of this device make this transistor more reliable to use in wider common applications Specifications: Package Type: TO-92 (Through-Hole) Type: NPN, PNP PCS: 50PCS BC547 and 50PCS BC557 Collector Current (Ic): 100mA Peak Collector Current (Icm):150mA Total Power Dissipation(Ptot): 400mW Collector Emitter Voltage(Vceo): 45V Saturation Voltage (Vce(sat)):140mV Transition Frequency(Ft): 270MHz Applications Switching Driver stage amplifier action AF amplifier Can be used Darlington pair Used in making led flasher
Bc547+bc557 General purpose Transistor - 100Pieces
Bc547+bc557 General purpose Transistor - 100Pieces
₦ 2,075.00 ₦ 2,500.00 -17%
0000RENG35030
Rehmie.com.ng
IRF1404 N-channel Original Mosfet Transistor 5pcs
IRF1404 N-CHANNEL MOSFET INVERTER POWER TRANSISTOR (5PCS) As the use of inverters grow steadily globally including Nigeria, there is the need for the right spare parts. Mosfet power transistor are the vital parts that gives you that reliable silent green power from inverters for use. A breakdown means replacement or repairs by maintenance engineers. This mosfet is a high grade premium Transistor for inverter building, manufacturing, repairs, fix, upgrades, etc. Features - low gate charge - enhancement mode - fast switching speed - 100% avalanche tested - minimum lot-lot variations for robust devices performance and reliable operation - suitable for inverters, ups, servers, power systems general purpose applications. Specifications Drain-source volt - 40Gate-source volt - 20Drain current continuous amp - 143 - 202Drain current single pulsed amp - 808Total power dissipation watt - 333Max operating temperature Celsius - 175
IRF1404 N-channel Original Mosfet Transistor 5pcs
IRF1404 N-channel Original Mosfet Transistor 5pcs
₦ 10,875.00 ₦ 12,500.00 -13%
000RENG135700
Rehmie.com.ng
200pcs General Multipurpose Transistor Components Mixed Wholesale
General Transistors are one of the most versatile discrete components in electronics. In digital circuits, they switch on and off while in analog circuits they are used to amplify signals Transistors are broadly divided into three types: bipolar transistors (bipolar junction transistors: BJTs), field-effect transistors (FETs), and insulated-gate bipolar transistors (IGBTs). A bipolar transistor is a type of transistor that uses both electrons and holes as charge carriers. The transistor operates as a Single Pole Single Throw (SPST) solid state switch. When a zero input signal applied to the base of the transistor, it acts as an open switch. If a positive signal applied at the input terminal then it acts like a closed switch SPECIFICATION Brand Name: Eiechip Origin: CN(Origin) Condition: New Type: Triode Transistor Package Type: Throught Hole Model Number: BC337 BC327 2N2222 2N2907 2N3904 2N3906 S8050 S8550 A1015 C1815 etc package: standard format: standard Package Weight: 0.05kg (0.02lb.) Package Size: 10cm x 10cm x 1cm (3.94in x 3.94in Some transistors descriptions: BC337 Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92-3 BC327 Bipolar (BJT) Transistor PNP 45V 800mA 100MHz 625mW Through Hole TO-92-3 2N2222 Bipolar (BJT) Transistor NPN 40V 600mA 200MHz 625mW Through Hole TO-92-3 2N2907 Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 625mW Through Hole TO-92-3 2N3904 Bipolar (BJT) Transistor NPN 40V 200mA 200MHz 625mW Through Hole TO-92-3 2N3906 Bipolar (BJT) Transistor PNP 40V 200mA 200MHz 625mW Through Hole TO-92-3 S8050 Bipolar (BJT) Transistor NPN 25V 0.5A 100MHz 1W Through Hole TO-92-3 S8550 Bipolar (BJT) Transistor PNP 25V 0.5A 100MHz 1W Through Hole TO-92-3 A1015 Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 400mW Through Hole TO-92-3 C1815 Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 400mW Through Hole TO-92-3
0000RENG49296
Rehmie.com.ng
Field Effect Mos Tube Original Power Transistor - 8pcs - 2sk2255 K2255
FEATURES High speed switching Gate threshold = 2.5~3.5 Volts Very low On Resistance = 0.13 Ohms Turn-on time = 80 nsec (typ) Drain / Source BV = 250 Volts Drain current = 18 Amps Power dissipation = 50 Watts Case = TO-220ML fully isolated No secondary breakthrough Low driving power High voltage APPLICATION Switching Regulator UPS DC-DC Converter General purpose power amplifier
000RENG144714
Rehmie.com.ng
20pcs Bd139 Bd140 ( 10pcs Bd139 + 10pcs Bd140 ) Amplifier Power Transistor
BD139 and BD 140 are popular NPN and PNP transistors used in wide variety of electronic circuits, due to its high collector current and low cost it is an ideal transistor to be used in educational electronic projects and also in commercial electronics. It can drive loads upto 1.5A which is a good feature due to which you can drive many high current components such as high power LEDs, high current relays, motors etc. The collector-emitter and collector-base voltage is also very high therefore it can easily survive in an electronic circuit that is operated under 80 volts. The collector dissipation is 12.5W due to which it is also ideal to use it in audio amplifier circuits. The saturation voltage of the transistor is just 0.5V.Technical Specifications of BD139/140 Technical Specifications of BD139 Transistors are: 1) Transistor Type: NPN 2) Max Collector Current(IC): 1.5A 3) Max Collector-Emitter Voltage (VCE): 80V 4) Max Collector-Base Voltage (VCB): 80V 5) Max Emitter-Base Voltage (VEBO): 5V 6) Max Collector Dissipation (Pc): 12.5 Watt 7) Max Transition Frequency (fT): 190 MHz 8) Minimum & Maximum DC Current Gain (hFE): 25 & ndash; 250 9) Max Storage & Operating temperature Should Be: -55 to +150 Centigrade Technical Specifications of BD140 Transistor are: 1) Transistor Type: PNP 2) Max Collector Current(IC): -1.5A 3) Max Collector-Emitter Voltage (VCE): & ndash;80V 4) Max Collector-Base Voltage (VCB): & ndash;80V
000RENG140023
Rehmie.com.ng
Mje13009 Npn Fast Switching Power Transistor, Crystal Triode, High Voltage - 10pcs
MJE13009 is a semiconductor device made of silicon material that falls under the category of NPN transistors. This device is mainly used for switching and amplification purposes. The power dissipation of this device is 100W and the emitter-base voltage is 9V which is the amount of voltage needed to bias the device Key Specifications/ Special Features: High breakdown voltage High current capability High switching speed APPLICATIONS & middot;Particularly suited for 115V and 220V switch mode applications such as switching regulators ,inverters ,motor controls, solenoid/relay drivers and deflection circuits CHARACTERISTICS Type: NPN Collector-Emitter Voltage: 400 V Collector-Base Voltage: 700 V Emitter-Base Voltage: 9 V Collector Current: 12 A Collector Dissipation: 100 W DC Current Gain (h): 8 to 40 Transition Frequency: 4 MHz Package: TO-220

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